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| TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS (V) 20 RDS(on)(m) 25 @ VGS = 4.5V 30 @ VGS = 2.5V 65 @ VGS = 1.8V ID (A) 5 4 2 Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Low Profile 0.75mm (typ.) ESD Protect 2KV Block Diagram Application Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. Package Packing 3Kpcs / 7" Reel 3Kpcs / 7" Reel 10Kpcs / 13" Reel 10Kpcs / 13" Reel N-Channel MOSFET TSM802CQ RV TDFN 3x3 TSM802CQ RVG TDFN 3x3 TSM802CQ RK TDFN 3x3 TSM802CQ RKG TDFN 3x3 Note: "G" denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a,b Continuous Source Current (Diode Conduction) Maximum Power Dissipation Ta = 25 C o Ta = 75 C o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Limit 20 12 6 30 1.4 3.1 1.6 +150 -55 to +150 Unit V V A A A W o o Operating Junction Temperature Operating Junction and Storage Temperature Range C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on 1"x1" FR4 Board, t 10 sec. c. Pulse limited <5s @ ID=10A / VGS=10V 1/6 Version: D08 Symbol RJC RJA Limit 4.5 48 Unit o o C/W C/W TSM802 20V N-Channel MOSFET w/ESD Protected Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250uA VDS = VGS, ID = 250uA VGS = 12V, VDS = 0V VDS = 16V, VGS = 0V VDS =5V, VGS = 4.5V VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A VGS = 1.8V, ID = 2A VDS = 10V, ID = 4.5A IS = 2A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min 20 0.6 --30 ------------ Typ -0.8 ---18 24 39 30 0.6 15 3.4 1.2 950 450 135 140 210 3700 2000 Max -1.0 10 1.0 -25 30 65 -1.2 20 -----200 250 4800 2600 Unit V V uA uA A m S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 10V, ID = 4.5A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 10, ID = 1A, VGEN = 4.5V, ----- nS RG = 6 Turn-Off Fall Time tf Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 Mechanical Drawing DIM A A1 A3 b D D1 E E2 e K L H TDFN 3x3 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.65 0.85 0.026 0.034 0.00 0.05 0.000 0.002 0.15 0.25 0.006 0.010 0.20 0.30 0.008 0.012 2.90 3.10 0.114 0.122 2.20 2.30 0.086 0.090 2.90 3.10 0.114 0.122 1.49 1.59 0.058 0.063 0.625 0.675 0.025 0.027 0.25 0.35 0.010 0.014 0.35 0.45 0.014 0.017 0.61 0.71 0.024 0.028 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: D08 TSM802 20V N-Channel MOSFET w/ESD Protected Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: D08 |
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